Product Summary
The S29GL032N90TFI04 is a 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The device is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the S29GL032N90TFI04 has 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL032N90TFI04 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL032N90TFI04 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground, VCC: –0.5 V to +4.0 V; (4)A9, OE#, ACC and RESET#: –0.5 V to +12.5 V; (5)All other pins: –0.5 V to VCC+0.5 V; (6)Output Short Circuit Current: 200 mA.
Features
S29GL032N90TFI04 features: (1)Single power supply operation; (2)Manufactured on 110 nm MirrorBit process technology; (3)Secured Silicon Sector region; (4)Flexible sector architecture; (5)Enhanced VersatileI/O Control; (6)Compatibility with JEDEC standards; (7)100,000 erase cycles typical per sector; (8)20-year data retention typical.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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S29GL032N90TFI040 |
Spansion |
Flash 32MB 2.7-3.6V 90ns BTM SECTOR PBF |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
S29GL016A |
Other |
Data Sheet |
Negotiable |
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S29GL01GP |
Other |
Data Sheet |
Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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