(China (Mainland))
Product Summary
The Hynix HY27UF081G2A is a 128Mx8bit NAND Flash with spare 4Mx8 bit capacity. The HY27UF081G2A is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UF081G2A contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
Parametrics
HY27UF081G2A absolute maximum ratings: (1)Ambient Operating Temperature (Temperature Range Option 1): 0 to 70 ℃; (2)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (3)Temperature Under Bias: -50 to 125 ℃; (4)Storage Temperature: -65 to 150 ℃; (5)Input or Output Voltage: -0.6 to 4.6 V; (6)Supply Voltage: -0.6 to 4.6 V.
Features
HY27UF081G2A features: (1)high densitY NAND flash memories: Cost effective solutions for mass storage applications; (2)NAND interface: x8 or x16 bus width,Multiplexed Address/ Data, Pinout compatibility for all densities; (3)supply voltage: VCC = 2.7 to 3.6V : HY27UFxx1G2A; (4)Memory Cell Array: (2K+64) Bytes x 64 Pages x 1,024 Blocks, (1K+32) Bytes x 64 Pages x 1,024 Blocks; (5)page size: x8 device : (2K+64 spare) Bytes.
Diagrams
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HY27SF081G2M |
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HY27SF161G2M |
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HY27SG082G2M |
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HY27SG162G2M |
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