Product Summary

The E28F800B5B70 is a Smart 5 boot block memory. The Smart 5 boot block memory E28F800B5B70 provides pinout-compatible flash memories at the 2-, 4-, and 8-Mbit densities. The E28F800B5B70 can be configured to operate either in 16-bit or 8-bit bus mode, with the data divided into individually erasable blocks. The E28F800B5B70 provides 8-bit operation in a compact package.

Parametrics

E28F800B5B70 absolute maximum ratings: (1)Commercial Operating Temperature During Read/Erase/Program: 0 ℃ to +70 ℃; (2)Temperature Under Bias: –10 ℃ to +80 ℃; (3)Extended Operating Temperature; (4)During Read/Erase/Program: –40 ℃ to +85 ℃; (5)Temperature Under Bias: –40 ℃ to +85 ℃; (6)Storage Temperature: –65 ℃ to +125 ℃; (7)Voltage on Any Pin(except VCC, VPP, A9 and RP#) with Respect to GND: –2.0 V to +7.0 V(2); (8)Voltage on Pin RP# or Pin A9 with Respect to GND: –2.0 V to +13.5 V(2,3); (9)VPP Program Voltage with Respect to GND during Block Erase and Word/Byte Program: –2.0 V to +14.0 V(2,3); (10)VCC Supply Voltage with Respect to GND: –2.0 V to +7.0 V(2); (11)Output Short Circuit Current: 100 mA.

Features

E28F800B5B70 features: (1)SmartVoltage Technology. Smart 5 Flash: 5 V Reads, 5 V or 12 V Writes. Increased Programming Throughput at 12 V VPP; (2)Very High-Performance Read. 2-, 4-Mbit: 60 ns Access Time. 8-Mbit: 70 ns Access Time; (3)x8 or x8/x16-Configurable Data Bus; (4)Low Power Consumption. Max 60 mA Read Current at 5 V. Auto Power Savings: <1 mA Typical Standby Current; (5)Optimized Array Blocking Architecture. 16-KB Protected Boot Block. Two 8-KB Parameter Blocks. 96-KB and 128-KB MaiBlocks. Top or Bottom Boot Locations.

Diagrams

E28F800B5B70 Pinout Diagram

E28F008S5120
E28F008S5120

IC FLASH 8MBIT 120NS 40TSOP
Data Sheet
Negotiable 
E28F320J3A110SL5FS
E28F320J3A110SL5FS

IC FLASH 32MBIT 110NS 56TSOP
Data Sheet
Negotiable