Product Summary

The K4M281633H-BN75 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design of the K4M281633H-BN75 allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.


K4M281633H-BN75 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss: -1.0 ~ 4.6 V; (3)Storage temperature: -55 ~ +150 ℃; (4)Power dissipation: 1.0 W; (5)Short circuit current: 50 mA.


K4M281633H-BN75 features: (1)3.0V & 3.3V power supply.; (2)LVCMOS compatible with multiplexed address.; (3)Four banks operation.; (4)MRS cycle with address key programs: CAS latency (1, 2 & 3), Burst length (1, 2, 4, 8 & Full page), Burst type (Sequential & Interleave); (5)EMRS cycle with address key programs.; (6)All inputs are sampled at the positive going edge of the system; (7)clock; (8)Burst read single-bit write operation.


K4M281633H-BN75 block diagram



Data Sheet