Product Summary
The BLV33 is a VHF linear power transistor. The BLV33 NPN silicon planar epitaxial transistor encapsulated in a 1x16" 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud.
Parametrics
BLV33 absolute maximum ratings: (1)VCESM collector-emitter voltage VBE = 0: 65 V; (2)VCEO collector-emitter voltage open base: 33 V; (3)VEBO emitter-base voltage open collector: 4 V; (4)IC collector current (DC): 12.5 A; (5)IC(AV) average collector current: 12.5 A; (6)ICM peak collector current f > 1 MHz: 20 A; (7)Ptot total power dissipation (DC) Tmb = 25 ℃: 132 W; (8)Prf RF power dissipation f > 1 MHz; Tmb = 25 ℃: 165 W.
Features
BLV33 features: (1)Diffused emitter ballasting resistors for an optimum temperature profile; (2)Gold sandwich metallization ensures excellent reliability.
Diagrams

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![]() BLV33 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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![]() BLV30 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BLV31 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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![]() BLV32F |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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![]() BLV33 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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![]() |
![]() BLV34 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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(China (Mainland))









