K9WAG08U1M-PCBO

Product Summary

Offered in 1G x 8bit, the K9WAG08U1M-PCBO is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation of the K9WAG08U1M-PCBO can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins of the K9WAG08U1M-PCBO serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9WAG08U1M-PCBO extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9WAG08U1M-PCBO is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9WAG08U1M-PCBO absolute maximum ratings: (1)Voltage on any pin relative to VSS, VCC: -0.6 to +4.6 v; VIN: -0.6 to +4.6 V; VI/O: -0.6 to Vcc+0.3 (<4.6V) v; (2)Temperature Under Bias: K9XXG08UXM-XCB0, TBIAS: -10 to +125℃; K9XXG08UXM-XIB0, TBIAS: -40 to +125℃; (3)Storage Temperature, TSTG: -65 to +150 ℃; (4)Short Circuit Current, IOS: 5 mA.

Features

K9WAG08U1M-PCBO features: (1)Voltage Supply: 2.70V ~ 3.60V; (2)Organization: Memory Cell Array: (1G + 32M) x 8bit, Data Register : (2K + 64) x 8bit; (3)Automatic Program and Erase: Page Program : (2K + 64)Byte, Block Erase: (128K + 4K)Byte; (4)Page Read Operation: Page Size: (2K + 64)Byte, Random Read : 20μs(Max.), Serial Access: 25ns(Min.); (5)Fast Write Cycle Time: Page Program time: 200μs(Typ.), Block Erase Time : 1.5ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC), Data Retention : 10 Years; (9)Command Driven Operation; (10)Intelligent Copy-Back with internal 1bit/528Byte EDC; (11)Unique ID for Copyright Protection; (12)Package : K9K8G08U0M-YCB0/YIB0: 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch); K9K8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE, 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch); K9WAG08U1M-YCB0/YIB0: 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch); K9WAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE, 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch); K9WAG08U1M-ICB0/IIB0: 52 - Pin TLGA (12 x 17 / 1.0 mm pitch).

Diagrams