(China (Mainland))
Product Summary
The K9F5608UOB-YIBO is a 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory. It is offered in 32Mx8bit or 16Mx16bit, the K9F5608UOB-YIBO is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. The NAND cell of the K9F5608UOB-YIBO provides the most cost-effective solutIon for the solid state mass storage market.
Parametrics
K9F5608UOB-YIBO absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 2.45 V; (2)Temperature Under Bias: -10 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current: 5 mA.
Features
K9F5608UOB-YIBO features: (1)Voltage Supply: 1.8V device(K9F56XXQ0C) : 1.70~1.95V, 2.65V device(K9F56XXD0C) : 2.4~2.9V, 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V; (2)Organization: Memory Cell Array, X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit, X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit, Data Register, X8 device(K9F5608X0C) : (512 + 16)bit x 8bit, X16 device(K9F5616X0C) : (256 + 8)bit x16bit; (3)Automatic Program and Erase: Page Program, X8 device(K9F5608X0C) : (512 + 16)Byte, X16 device(K9F5616X0C) : (256 + 8)Word.
Diagrams
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 K9F5608D0C |
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K9F5608D0D |
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K9F5608Q0B-DCB0 |
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K9F5608Q0B-DIB0 |
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K9F5608Q0B-HCB0 |
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K9F5608Q0B-HIB0 |
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