Product Summary

The K4S281632K-UC75 is 134,217,728 bits synchronous high data rate Dynamic RAM, which is organized as 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design of the K4S281632K-UC75 allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Parametrics

K4S281632K-UC75 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to VSS: -1.0 ~ 4.6 V; (3)Storage temperature: -55 ~ +150 ℃; (4)Power dissipation: 1 W; (5)Short circuit current: 50 mA.

Features

K4S281632K-UC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3), Burst length (1, 2, 4, 8 & Full page), Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM (x8) & L(U)DQM (x16) for masking; (8)Auto & self refresh; (9)64ms refresh period (4K Cycle).

Diagrams

K4S281632K-UC75 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
K4S281632K-UC75
K4S281632K-UC75

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
K4S280432A
K4S280432A

Other


Data Sheet

Negotiable 
K4S280432B
K4S280432B

Other


Data Sheet

Negotiable 
K4S280432C
K4S280432C

Other


Data Sheet

Negotiable 
K4S280432E-TC(L)75
K4S280432E-TC(L)75

Other


Data Sheet

Negotiable 
K4S280432F
K4S280432F

Other


Data Sheet

Negotiable 
K4S280432F-TC(L)75
K4S280432F-TC(L)75

Other


Data Sheet

Negotiable