(China (Mainland))
Product Summary
The BLV194 is a UHF power transistor. NPN silicon planar epitaxial transistor BLV194 intended for common emitter class-AB operation in the 900 MHz communications band. The transistor BLV194 has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.
Parametrics
BLV194 absolute maximum ratings: (1)VCEO collector-emitter voltage open base: 16 V; (2)VCES collector-emitter voltage base short-circuited: 32 V; (3)VEBO emitter-base voltage open collector: 3 V; (4)IC DC collector current: 3 A; (5)IC(AV) average collector current: 3 A; (6)Ptot total power dissipation Tmb = 25 ℃: 46 W; (7)Tstg storage temperature -65 150 ℃; (8)Tj junction temperature: 200 ℃.
Features
BLV194 features: (1)Emitter-ballasting resistors for an optimum temperature profile; (2)Gold metallization ensures excellent reliability.
Diagrams
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 BLV194 |
Other |
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Data Sheet |
Negotiable |
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BLV11 |
Advanced Semiconductor, Inc. |
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Data Sheet |
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Other |
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Data Sheet |
Negotiable |
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BLV193 |
Other |
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Data Sheet |
Negotiable |
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